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| Neu: Silizium-PIN-Fotodiode mit Tageslichtsperrfilter New: Silicon-PIN-Photodiode with Daylight Filter SFH 205 FA Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen bei 880 nm q Kurze Schaltzeit (typ. 20 ns) q 5 mm-Plastikbauform im LED-Gehause q Auch gegurtet lieferbar Anwendungen q IR-Fernsteuerung von Fernseh- und Rundfunkgeraten, Videorecordern, Lichtdimmern, Geratefernsteuerungen q Lichtschranken fur Gleich- und Wechsellichtbetrieb Features q Especially suitable for applications of 880 nm q Short switching time (typ. 20 ns) q 5 mm LED plastic package q Also available on tape Applications q IR-remote control of hi-fi and TV sets, video tape recorders, dimmers, remote control of various equipment q Photointerrupters Typ Type SFH 205 FA Bestellnummer Ordering Code Q62702-P1677 Semiconductor Group 1 1998-03-17 feof6647 SFH 205 FA Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur (Lotstelle 2 mm vom Gehause entfernt bei Lotzeit t 3 s) Soldering temperature in 2 mm distance from case bottom (t 3 s) Sperrspannung Reverse voltage Verlustleistung, TA = 25 C Total power dissipation Kennwerte (TA = 25 C, = 870 nm) Characteristics Bezeichnung Description Fotoempfindlichkeit Spectral sensitivity VR = 5 V, Ee = 1 mW/cm2 Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Abstand Chipoberflache zu Gehauseoberflache Distance chip surface to case surface Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current Symbol Symbol Wert Value 60 ( 45) Einheit Unit A Symbol Symbol Wert Value - 55 ... + 100 230 Einheit Unit C C Top; Tstg TS VR Ptot 32 150 V mW S S max 900 740 ... 1100 nm nm A LxB LxW H 7.00 2.65 x 2.65 mm2 mm x mm 2.3 ... 2.5 mm 60 2 ( 30) Grad deg. nA IR Semiconductor Group 2 1998-03-17 SFH 205 FA Kennwerte (TA = 25 C, = 870 nm) Characteristics (cont'd) Bezeichnung Description Spektrale Fotoempfindlichkeit Spectral sensitivity Quantenausbeute Quantum yield Leerlaufspannung, Ee = 1 mW/cm2 Open-circuit voltage Kurzschlustrom, Ee = 1 mW/cm2 Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 ; VR = 5 V; = 850 nm; Ip = 800 A Durchlaspannung, IF = 100 mA, E = 0 Forward voltage Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V Nachweisgrenze, VR = 10 V Detection limit Symbol Symbol Wert Value 0.63 0.9 350 ( 280) 56 20 Einheit Unit A/W Electrons Photon mV A ns S VO ISC tr, tf VF C0 TCV TCI NEP 1.3 72 - 2.6 0.03 4.0 x 10- 14 V pF mV/K %/K W Hz cm * Hz W D* 6.6 x 1012 Semiconductor Group 3 1998-03-17 SFH 205 FA Relative spectral sensitivity Srel = f () 100 OHF01430 Photocurrent IP = f (Ee), VR = 5 V Open-circuit voltage VO = f (Ee) P Total power dissipation Ptot = f (TA) 10 4 mV 160 mW Ptot 140 120 100 OHF00394 Srel % 80 A 10 3 OHF01097 VO 10 3 10 2 70 60 50 40 30 VO 10 1 10 2 80 60 P 10 0 10 1 40 20 20 10 0 400 600 800 1000 nm 1200 10 -1 0 10 10 1 10 2 W/cm 2 Ee 10 0 10 4 0 0 20 40 60 80 C 100 TA Dark current IR = f (VR), E = 0 Capacitance C = f (VR), f = 1 MHz, E = 0 100 OHF00081 Dark current IR = f (TA), VR = 10 V, E = 0 10 3 OHF00082 C pF 80 70 60 50 40 30 20 10 0 -2 10 10 -1 10 0 10 1 V 10 2 R nA 10 2 10 1 10 0 10 -1 0 20 40 60 VR 80 C 100 TA Directional characteristics Srel = f () 40 30 20 10 0 1.0 OHF01402 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Semiconductor Group 4 1998-03-17 |
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